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| FDN352AP Single P-Channel, PowerTrench(R) MOSFET April 2005 FDN352AP Single P-Channel, PowerTrench(R) MOSFET Features -1.3 A, -30V -1.1 A, -30V RDS(ON) = 180 m @ VGS = -10V RDS(ON) = 300 m @ VGS = -4.5V High performance trench technology for extremely low RDS(ON). High power version of industry Standard SOT-23 package. Identical pin-out to SOT-23 with 30% higher power handling capability. General Description This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss is needed in a very small outline surface mount package. Applications Notebook computer power management D D S G G S SuperSOTTM-3 Absolute Maximum Ratings TA = 25C unless otherwise noted Symbol VDSS VGSS ID PD TJ, TSTG RJA RJC Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range (Note 1a) Parameter Ratings -30 25 -1.3 -10 0.5 0.46 -55 to +150 Units V V A W C C/W Thermal Characteristics Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 250 75 Package Marking and Ordering Information Device Marking 52AP Device FDN352AP Reel Size 7'' Tape width 8mm Quantity 3000 units (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDN352AP Rev. C FDN352AP Single P-Channel, PowerTrench(R) MOSFET Electrical Characteristics TA = 25C unless otherwise noted Symbol Off Characteristics BVDSS BVDSS TJ IDSS IGSS VGS(th) VGS(th) TJ RDS(on) Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C VDS = -24 V, VGS = 0 V VGS = 25V, VDS = 0 V VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25C VGS = -10 V, ID = -1.3 A VGS = -4.5 V, ID = -1.1 A VGS = -4.5 V, ID = -1.1 A, TJ = 125C VDS = -5 V, ID = -0.9 A VDS = -15 V, VGS = 0 V, f = 1.0 MHz -0.8 -2.0 4 150 250 330 2.0 180 300 400 -30 -17 -1 100 -2.5 V mV/C A nA Parameter Test Conditions Min Typ Max Units On Characteristics (Note 2) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance V mV/C m gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr S Dynamic Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance 150 40 20 pF pF pF Switching Characteristics (Note 2) Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = -10V, ID = -0.9 A, VGS = -4.5 V VDD = -10 V, ID = -1 A, VGS = -10 V, RGEN = 6 4 15 10 1 1.4 0.5 0.5 8 28 18 2 1.9 ns ns ns ns nC nC nC Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge VGS = 0 V, IS = -0.42 A IF = -3.9 A, dIF/dt = 100 A/s (Note 2) -0.8 17 7 -0.42 -1.2 A V ns nC Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. (a) RJA = 250C/W when mounted on a 0.02 in2 pad of 2oz. copper. (b) RJA = 270C/W when mounted on a 0.001 in2 pad of 2oz. copper. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 2 FDN352AP Rev. C www.fairchildsemi.com FDN352AP Single P-Channel, PowerTrench(R) MOSFET Typical Characteristics 5 VGS=-10V 4 2.4 VGS=-4.0V 2.2 2.0 -4.5V 1.8 -5.0V 1.6 -6.0V 1.4 1.2 1.0 0.8 0 0.5 1 1.5 -V DS , DRAIN TO SOURCE VOLTAGE (V) 2 2.5 0 2 4 6 -ID, DRAIN CURRENT (A) 8 10 -7.0V -8.0V -10V -4.5V 3 -4.0V 2 -3.5V 1 -3.0V 0 Figure 1. On-Region Characteristics. RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 0.7 -6.0V -ID, DRAIN CURRENT (A) Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.4 RDS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.2 RDS(ON), ON-RESISTANCE (OHM) I D = -0.9A VGS = -10V I D = -0.45A 0.6 0.5 1 0.4 T A = 125 oC 0.3 T A = 25 oC 0.2 0.8 0.6 -50 -25 0 25 50 75 100 TJ, JUNCTION TEMPERATURE ( oC) 125 150 0.1 2 4 6 8 -V GS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature. 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 -I S , REVERSE DRAIN CURRENT (A) VDS = -5V VGS = 0V -ID, DRAIN CURRENT (A) 8 TA = -55 oC 125 C o 10 1 0.1 25 oC 6 25 C o TA = 125 oC 4 0.01 0.001 0.0001 -55 oC 2 0 1 2 3 4 5 6 -VGS , GATE TO SOURCE VOLTAGE (V) 7 8 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD , BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 3 FDN352AP Rev. C www.fairchildsemi.com FDN352AP Single P-Channel, PowerTrench(R) MOSFET Typical Characteristics 10 I D = -0.9A 200 f = 1 MHz VGS = 0 V V DS = -10V -20V 6 -15V 4 150 -V GS, GATE-SOURCE VOLTAGE (V) 8 CAPACITANCE (pF) Ciss 100 Coss 50 Crss 2 0 0 0.5 1 1.5 2 Q g, GATE CHARGE (nC) 2.5 3 0 0 5 10 15 20 25 30 -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 50 Figure 8. Capacitance Characteristics. P(pk), PEAK TRANSIENT POWER (W) 40 -ID, DRAIN CURRENT (A) 10 RDS(ON) LIMIT 1ms 1 10ms 100ms 1s 0.1 VGS = -10V SINGLE PULSE R JA = 270 o C/W TA = 25 o C 0.01 0.1 1 10 -V DS , DRAIN-SOURCE VOLTAGE (V) 10s DC 100s SINGLE PULSE RJA = 270C/W T A = 25C 30 20 10 100 0 0.0001 0.001 0.01 0.1 1 t 1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * R JA RJA = 270C/W P(pk) t1 t2 T J - TA = P * RJA(t) Duty Cycle, D = t 1 / t 2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. 4 FDN352AP Rev. C www.fairchildsemi.com FDN352AP Single P-Channel, PowerTrench(R) MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM Across the board. Around the world.TM OPTOLOGIC OPTOPLANARTM The Power Franchise PACMANTM Programmable Active DroopTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 5 FDN352AP Rev. C www.fairchildsemi.com |
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